Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium

A substrate processing apparatus comprising:

• a process chamber in which a substrate is processed;
• a heater configured to heat the substrate in the process chamber;
• a reducing gas supply system configured to supply a reducing gas to the substrate in the process chamber;
• a first process gas supply system configured to supply a first process gas, which does not include an oxidizing gas, to the substrate in the process chamber;
• a transfer system configured to transfer the substrate into the process chamber;
• and
• a controller configured to be capable of controlling the heater, the reducing gas supply system, the first process gas supply system, and the transfer system so as to perform a process including:
• (a) loading the substrate including a conductive metal-element-containing film on a surface of the substrate into the process chamber under a first temperature;
• (b) supplying the reducing gas to the conductive metal-element-containing film while raising a temperature of the substrate to a second temperature higher than the first temperature in the process chamber, wherein the reducing gas performs a chemical reduction reaction;
• and
• (c) forming a first film, which contains silicon and at least one selected from the group of nitrogen and carbon, on the metal-element-containing film, by supplying the first process gas to the substrate under the second temperature in the process chamber.

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:

• (a) loading a substrate including a conductive metal-element-containing film on a surface of the substrate into a process chamber under a first temperature;
• (b) supplying a reducing gas to the conductive metal-element-containing film while raising a temperature of the substrate to a second temperature higher than the first temperature in the process chamber, wherein the reducing gas performs a chemical reduction reaction;
• and
• (c) forming a first film, which contains silicon and at least one selected from the group of nitrogen and carbon, on the metal-element-containing film, by supplying a first process gas, which does not include an oxidizing gas, to the substrate under the second temperature in the process chamber.