Method of programming flash memory
AssigneeImec Vzw
InventorsDevin Verreck, Maarten Rosmeulen
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Abstract
This disclosed technology relates to a programmable NAND flash memory and a method for operating the NAND flash memory. The method comprises applying a first voltage to the first gate and a pass voltage to one or more word lines to allow charge to inject into the channel layer and form charge packets. Each charge packet can be arranged next to one of the second gates. The method further comprises applying a programming voltage to the word lines to move the charge packets from the channel layer into the memory cells associated with the second gates next to which they are arranged.
Claims17
A method for operating a NAND flash memory, comprising:
- providing the NAND flash memory, the NAND flash memory comprising:
- a semiconductor channel layer,
- a first gate arranged on a first side of the channel layer and extending along the channel layer, and
- a plurality of second gates arranged on a second side of the channel layer and sequentially along the channel layer, wherein each second gate is associated with a memory cell of the NAND flash memory and connected to one of a plurality of word lines;
- applying a first voltage to the first gate and a pass voltage to one or more word lines to inject charge into the channel layer positioned next to one or more second gates and form one or more charge packets from the charge in the channel layer, wherein each charge packet is formed adjacent to one of the one or more second gates;
- and
- applying a programming voltage to the one or more word lines to move the one or more charge packets from the channel layer into one or more charge storage layers associated with the one or more second gates adjacent to which the one or more charge packets are formed.
Dependencies are inferred from the claim text.