Systems and method to test semiconductor devices

A system to test semiconductor devices, comprising:

• a storage device;
• and
• a noise detector, the noise detector to:
• obtain a plurality of first results measured on a semiconductor device;
• compare each of the plurality of first results with a stored first boundary value and a stored second boundary value, wherein the stored first boundary value corresponds to a maximum value determined from a plurality of second results measured on the semiconductor device, and the stored second boundary value corresponds to a minimum value determined from a plurality of third results measured on the semiconductor device;
• determine, based on the comparison between each of the plurality of first results and each of the stored first boundary value and the stored second boundary value, whether to update the stored first boundary value and the stored second boundary value;
• in response to the comparison, update the stored first boundary value by to a maximum value of the plurality of first results, and the stored second boundary value to a minimum value of the plurality of first results;
• calculate a first delta value that is a difference between the updated first boundary value and the updated second boundary value;
• and
• update a timer corresponding to random telegraph noise (RTN) of the semiconductor device responsive to the first delta value exceeding a first noise threshold.

A non-transitory computer-readable storage medium having instructions embodied thereon that, when executed by one or more processors, cause the one or more processors to perform a method comprising:

• obtaining a plurality of first results measured on a semiconductor device;
• comparing each of the plurality of first results with a stored first boundary value and a stored second boundary value, wherein the stored first boundary value corresponds to a maximum value determined from a plurality of second results measured on the semiconductor device, and the stored second boundary value corresponds to a minimum value determined from a plurality of third results measured on the semiconductor device;
• determining, based on the comparison between each of the plurality of first results and each of the stored first boundary value and the stored second boundary value, whether to update the stored first boundary value and the stored second boundary value;
• in response to the comparison, updating the stored first boundary value to a maximum value of the plurality of first results, and the stored second boundary value to a minimum value of the plurality of first results;
• calculating a first delta value that is a difference between the updated first boundary value and the updated second boundary value;
• and
• updating a timer corresponding to random telegraph noise (RTN) of the semiconductor device responsive to the first delta value exceeding a first noise threshold.