Matrix-based characterization and measurements for semiconductor thin-film material

A method for detection of anomalies in semiconductor thin-film materials, the method comprising:

• using filtering optics, including a microlens array stacked with a diffraction grating, to provide a set of filter-separated light beams respectively associated with different polarization states of polarized light directed towards a sample of semiconductor thin-film material;
• providing a set of sample-characterizing response data, by passing light through the filtering optics towards an image sensor, which characterizes the sample of semiconductor thin-film material relative to distinct pixels defined by microlenses in the microlens array, based on at least two of the following:
• (a) sets of polarization-state values respectively associated with the filter-separated ones of the different polarization states, (b) different wavelengths associated with the different polarization states, and (c) incidence angles of light arising from or caused by further processing of the filter-separated ones of the different polarization states;
• and
• analyzing, in response to the step of providing a set of sample-characterizing response data, the semiconductor thin-film material.