Tungsten silicide target member and method for manufacturing same, and method for manufacturing tungsten silicide film
AssigneeJX Advanced Metals Corporation
InventorsTakafumi Dasai, Takayuki Asano, Takeo Okabe
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Abstract
Provided is a tungsten silicide target that efficiently suppresses generation of particles during sputtering deposition. A tungsten silicide target having a two-phase structure of a WSi2 phase and a Si phase, wherein the tungsten silicide target is represented by a composition formula in an atomic ratio: WSix with X>2.0; wherein, when observing a sputtering surface, a ratio of a total area I1 of Si grains having an area per a Si grain of 63.6 μm2 or more to a total area S1 of the Si grains forming the Si phase (I1/S1) is 5% or less; and wherein a Weibull modulus of flexural strength is 2.1 or more.
Claims15
A hot-pressed tungsten silicide target having a two-phase structure of a WSi2 phase and a Si phase,
- wherein the tungsten silicide target is represented by a composition formula in an atomic ratio:
- WSix with X>2.0;
- wherein, when observing a sputtering surface, a ratio (I1/S1) of a total area I1 of Si grains having an area per a Si grain of 63.6 μm2 or more to a total area S1 of the Si grains forming the Si phase is 5% or less;
- wherein a ratio of a median diameter D50 of the Si grains forming the Si phase to a median diameter D50 of the WSi2 grains forming the WSi2 phase is 0.306 or less,
- wherein a Weibull modulus of flexural strength is 2.1 or more, and
- wherein the tungsten silicide target has an oxygen concentration of 5000 ppm by mass or less.
Dependencies are inferred from the claim text.