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US 12,404,450 B2Granted
Photodetector element, manufacturing method for photodetector element, image sensor, dispersion liquid, and semiconductor film
AssigneeFUJIFILM Corporation
InventorsMasahiro Takata, Masashi Ono, Shunsuke Kitajima
Life of this patent
Estimating the term…
Abstract
A photodetector element contains aggregates of PbS quantum dots and a ligand that is coordinated to the PbS quantum dot, in which the PbS quantum dot contains more than 0 mol and 1.40 mol or less of a Pb atom with respect to 1 mol of a S atom.
Claims18
A photodetector element comprising:
- a photoelectric conversion layer that contains aggregates of PbS quantum dots and a ligand that is coordinated to the PbS quantum dot,
- wherein the PbS quantum dot contains more than 0 mol and 1.40 mol or less of a Pb atom with respect to 1 mol of a S atom, and the photoelectric conversion layer has a thickness of 10 to 600 nm, and a refractive index of 2.0 to 3.0.
Dependencies are inferred from the claim text.