Systems and methods for non-epitaxial high Schottky-barrier heterojunction solar cells

A heterojunction solar cell, comprising:

• at least one back contact;
• at least one semiconductor substrate, wherein the at least one semiconductor substrate is an n-type doped GaAs or a p-type doped GaAs;
• at least one passivation layer, wherein the at least one passivation layer passivates one surface of the at least one semiconductor substrate and comprises one of:
• at least one thiol group, 1,3-Diisopropylimidazolium Hydrogencarbonate (NHC), or at least one sulfide ion;
• at least one contact layer, wherein the at least one contact layer is a hole transport layer or an electron transport layer, and the contact layer is on top of the at least one passivation layer;
• wherein the hole transport layer comprises one of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), 2,2′,7,7′-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′- spirobifluorene (SPIRO), SPIRO doped with 5 wt % Tris(pentafluorophenyl)borane, tris(4-carbazoyl-9-ylphenyl)amine (TCTA), TCTA doped with 5 wt % Tris(pentafluorophenyl)borane, polystyrene (PS), 4,4′-Bis(N-carbazolyl)-1,1′-biphenyl(CBP), copper (1) iodide (Cul) dissolved in acetonitrile, polyvinyl alcohol (PVA), copper thiocyanate (CuSCN), 1,1-Bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC), TAPC doped with 5 wt % Tris(pentafluorophenyl)borane, poly(triaryl amine) (PTAA), PTAA doped with 5 wt % Tris(pentafluorophenyl)borane, nickel oxide (NiO) nanoparticles, or NiO film;
• and
• at least one electrode modified layer, wherein the at least one electrode modified layer is on top of the at least one contact layer;
• wherein the at least one passivation layer is positioned between the at least one semiconductor substrate and the at least one contact layer and bonds to both the at least one semiconductor substrate and the at least one contact layer;
• wherein the open circuit voltage of the solar cell is at least 830 mV;
• and
• wherein the heterojunction solar cell is non-epitaxial.