Electrostatic discharge diodes with different sizes and methods of manufacturing thereof

A semiconductor device, comprising:

• a substrate having a first conductivity;
• a first well enclosed by the substrate and having a second conductivity;
• a second well enclosed by the substrate and having the second conductivity;
• a first contact region enclosed by the first well and having the first conductivity;
• a second contact region enclosed by the second well and having the first conductivity;
• a third contact region also enclosed by the second well and having the second conductivity;
• a fourth contact region enclosed by the substrate, disposed on a first lateral side of the first and second wells, and having the second conductivity;
• a fifth contact region enclosed by the substrate, disposed opposite the fourth contact region from the first and second wells, and having the first conductivity;
• a sixth contact region enclosed by the substrate, disposed on a second lateral side of the first well, and having the second conductivity;
• and
• a seventh contact region enclosed by the substrate, disposed opposite the sixth contact region from the first well, and having the first conductivity.

A method for fabricating semiconductor devices, comprising:

• forming a substrate having a first conductivity;
• forming a plurality of wells enclosed by the substrate and having a second conductivity, the plurality of wells comprising a first well and a second well;
• forming a first contact region enclosed by the first well and having the first conductivity;
• forming a second contact region enclosed by the second well and having the first conductivity;
• forming a third contact region also enclosed by the second well and having the second conductivity;
• forming a fourth contact region enclosed by the substrate, disposed on a first lateral side of the first and second wells, and having the second conductivity;
• forming a fifth contact region enclosed by the substrate, disposed opposite the fourth contact region from the first and second wells, and having the first conductivity;
• forming a sixth contact region enclosed by the substrate, disposed on a second lateral side of the first well, and having the second conductivity;
• and
• forming a seventh contact region enclosed by the substrate, disposed opposite the sixth contact region from the first well, and having the first conductivity.