Nondestructive characterization for crystalline wafers

Abstract

A method of analyzing semiconductor wafers includes capturing a first image of a first crystalline material, etching a first surface of the first crystalline material to delineate etch defects in the first crystalline material, and capturing a second image of first crystalline material after etching the first surface of the first crystalline material. Based on the second image, labels of etch defects delineated in the first surface of the first crystalline material are generated. The first image and the labels of etch defects are spatially coordinated to form a defect map identifying one or more defects in the first image based on the delineated etch defects, and based on the defect map and nondestructive data obtained from a second crystalline material, defects in the second crystalline material are identified.

Dependencies are inferred from the claim text.