Semiconductor device and method of manufacture

A method of forming a semiconductor device, comprising:

• fabricating a microelectromechanical system (MEMS) component, an analog circuit component, a high performance chip (HPC) component, and a deep trench capacitor (DTC) component;
• bonding a MEMS membrane substrate of the MEMS component to a top of the analog circuit component to form an integrated MEMS component/analog circuit component;
• bonding a bottom of the analog circuit component of the integrated MEMS component/analog circuit component to a top of the HPC component to form an integrated MEMS component/analog circuit component/HPC component;
• bonding a bottom of the HPC component of the integrated MEMS component/analog circuit component/HPC component to a top of the DTC component to form an integrated MEMS component/analog circuit component/HPC component/DTC component;
• and
• bonding a bottom of the DTC component of the integrated MEMS component/analog circuit component/HPC component/DTC component to a top of a circuit board component.

A method of forming a semiconductor device, comprising:

• forming a microelectromechanical system (MEMS) component comprising a MEMS membrane substrate and a MEMS sidewall, the MEMS component including a plurality of MEMS pixels;
• forming an analog circuit component bonded to the MEMS component, the analog circuit component comprising at least one analog complementary metal oxide (CMOS) component within an analog circuit insulative layer, and an analog circuit component substrate;
• bonding a high performance chip (HPC) component to the analog circuit component substrate, the HPC component comprising at least one HPC metal component disposed within an HPC insulative layer, at least one bond pad, at least one bond pad via connecting the at least one bond pad and the at least one HPC metal component, and an HPC substrate;
• and
• bonding a deep trench capacitor (DTC) component to the HPC substrate, the DTC component comprising at least one DTC die disposed in a DTC carrier substrate.