Gas treatment system and gas treatment method using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsWonsu Lee, Kimoon Lee, Seungjun Lee, Jong san Chang, Joungwoo Han
Life of this patent
Estimating the term…
Abstract
A gas treatment system includes a first scrubber, a regenerative catalytic oxidizer (RCO) that treats gas that passes through the first scrubber, a second scrubber that treats the gas that passed through the regenerative catalytic oxidizer, and a dielectric barrier discharge (DBD) plasma reactor that treats the gas that passed through the second scrubber. The regenerative catalytic oxidizer includes a two-bed regenerative catalytic reactor.
Claims20
A gas treatment system, comprising:
- a first scrubber;
- a regenerative catalytic oxidizer (RCO) that treats gas received from the first scrubber;
- a second scrubber that treats the gas received from the regenerative catalytic oxidizer;
- and
- a dielectric barrier discharge (DBD) plasma reactor that treats the gas received from the second scrubber,
- wherein the regenerative catalytic oxidizer includes a two-bed regenerative catalytic reactor.
A gas treatment system, comprising:
- a first scrubber;
- a regenerative catalytic oxidizer (RCO) connected to the first scrubber;
- and
- a second scrubber connected to the regenerative catalytic oxidizer,
- wherein the regenerative catalytic oxidizer includes a rotary regenerative catalytic reactor.
A gas treatment system, comprising:
- a first scrubber that treats a gas discharged from a semiconductor process chamber;
- a regenerative catalytic oxidizer connected to the first scrubber, wherein the regenerative catalytic oxidizer decomposes a fluorinated compound (FC) in the gas received from the first scrubber;
- a second scrubber connected to the regenerative catalytic oxidizer, wherein the second scrubber treats the gas received from the regenerative catalytic oxidizer;
- and
- a dielectric barrier discharge (DBD) plasma reactor connected to the second scrubber.
A gas treatment method, comprising:
- treating a gas discharged from a semiconductor process chamber using a first scrubber;
- treating the gas that passed through the first scrubber with a regenerative catalytic oxidizer (RCO);
- treating the gas that passed through the regenerative catalytic oxidizer with a second scrubber;
- and
- treating the gas that passed through second scrubber with a dielectric barrier discharge (DBD) plasma reactor.
Dependencies are inferred from the claim text.