Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A substrate processing apparatus comprising:

• a precursor gas supply system configured to supply a precursor gas to a substrate;
• a reaction gas supply system configured to supply a reaction gas to the substrate;
• a heater configured to heat the substrate;
• and
• a controller configured to be capable of controlling the precursor gas supply system, the reaction gas supply system, and the heater to perform a process including:
• forming a film in a recess on a surface of the substrate by performing a cycle a predetermined number of times, the cycle including:
• (a) supplying the precursor gas to the substrate;
• and
• (b) supplying the reaction gas to the substrate,
• wherein in (a), the precursor gas is supplied to the substrate a plurality of times, and a processing condition under which the precursor gas is supplied for a first time is set to a processing condition under which self-decomposition of the precursor gas is capable of being more suppressed than a processing condition under which the precursor gas is supplied for at least one subsequent time after the first time.

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:

• forming a film in a recess on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including:
• (a) supplying a precursor gas to the substrate;
• and
• (b) supplying a reaction gas to the substrate,
• wherein in (a), the precursor gas is supplied to the substrate a plurality of times, and a processing condition under which the precursor gas is supplied for a first time is set to a processing condition under which self-decomposition of the precursor gas is capable of being more suppressed than a processing condition under which the precursor gas is supplied for at least one subsequent time after the first time.