RF sputtering of multiple electrodes with optimized plasma coupling through the implementation of capacitive and inductive components

An apparatus, comprising:

• a vacuum chamber configured to produce a substantially atmospheric vacuum environment for plasma processing;
• a radio frequency (RF) power supply located outside of the vacuum chamber;
• an RF matching network operatively coupled to the RF power supply;
• a set of low frequency or direct current (DC) power supplies located outside of the vacuum chamber;
• and
• a plurality of magnetron electrodes rotatably mounted within the vacuum chamber, the plurality of magnetron electrodes configured to receive RF power signals from the RF power supply through the RF matching network, and low frequency or DC power signals through the low frequency or DC power supplies;
• wherein the RF power signals, and the low frequency or DC power signals, are simultaneously delivered to the plurality of magnetron electrodes during a sputtering operation;
• wherein for coupling the RF power signals, and the low frequency or DC power signals, the plurality of magnetron electrodes and a set of electrical components are operative to manage inductive and capacitive reactance for coupling the RF power signals to provide optimized plasma coupling during the sputtering operation.