Electron source, method of manufacturing the same, and electron beam apparatus using the same
AssigneeHitachi High-Tech Corporation
InventorsToshiaki Kusunoki, Noriaki Arai, Tomihiro Hashizume, Keigo Kasuya
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AssigneeHitachi High-Tech Corporation
InventorsToshiaki Kusunoki, Noriaki Arai, Tomihiro Hashizume, Keigo Kasuya
Estimating the term…
The current stability of a field emission electron source and a Schottky electron source where a {100} plane of a hexaboride single crystal is used as an electron emission surface is improved. The electron source includes a tip of a hexaboride single crystal with a <100> axis, in which a top facet of a {100} plane that is surrounded by side facets including at least four {n11} planes and at least four {n10} planes where n represents an integer of 1, 2, or 3 is formed at a front end of the tip of the hexaboride single crystal, and a total area of the side facets of the {n11} planes is more than a total area of the side facets of the {n10} planes.
An electron source characterized by comprising a tip of a hexaboride single crystal with a <100> axis,
A method of manufacturing an electron source including a tip of a hexaboride single crystal with <100> orientation, the method comprising:
An electron beam apparatus comprising:
Dependencies are inferred from the claim text.