Method of OPC modeling
AssigneeSamsung Electronics Co., Ltd.
InventorDonghoon Kuk
Life of this patent
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Abstract
In a method of optical proximity correction (OPC) modeling, a resist image (RI) model is generated from an aerial image (AI) of a pattern. A light intensity of a portion having a level lower than a truncation level is replaced with the truncation level in an image profile of the RI model. The image profile is smoothed to remove a sharp point in the image profile. A Laplacian kernel is applied to the image profile to generate a contour image profile. A portion of the contour image profile having a value lower than a given level is truncated. A radius of curvature kernel is applied to the contour image profile. A reciprocal number of the radius of curvature is applied to the RI model.
Claims20
An optical proximity correction (OPC) method comprising:
- generating a resist image (RI) model from an aerial image (AI) of a pattern;
- replacing a light intensity of a portion of an image profile of the RI model, the portion having a level lower than a truncation level, with the truncation level;
- smoothing the image profile such that a sharp point in the image profile is removed;
- applying a Laplacian kernel to the smoothed image profile to generate a contour image profile;
- truncating a portion of the contour image profile having a value lower than a set level;
- applying a radius of curvature kernel to the contour image profile;
- and
- applying a reciprocal number of the radius of curvature to the RI model.
An optical proximity correction (OPC) method comprising:
- generating a resist image (RI) model from an aerial image (AI) of a pattern, the pattern including, at least, a first line and a second line each extending in a first direction and a third line extending in a second direction such that the third line is connected to the first and second lines;
- replacing a light intensity of a portion of an image profile of the RI model, the portion having a level lower than a truncation level, with the truncation level;
- smoothing the image profile such that a sharp point in the image profile is removed;
- applying a Laplacian kernel to the smoothed image profile to generate a contour image profile;
- truncating a portion of the contour image profile having a value lower than a set level;
- applying a radius of curvature kernel to the contour image profile;
- and
- applying a reciprocal number of the radius of curvature to the RI model.
An OPC method comprising:
- generating a resist image (RI) model from an aerial image (AI) of a pattern;
- replacing a light intensity of a portion of an image profile of the RI model, the portion having a level lower than a truncation level, with the truncation level;
- applying a Laplacian kernel to the image profile to generate a contour image profile;
- truncating a portion of the contour image profile having a value lower than a set level;
- applying a radius of curvature kernel to the contour image profile;
- and
- applying a reciprocal number of the radius of curvature to the RI model.
Dependencies are inferred from the claim text.