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AssigneeShanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
InventorsHaiyang Huang, Wei Li, Fengyuan Gan, Yi Zhou
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The present invention relates to a micro-nano structure sensitive to a laser beam in a specific direction, including a substrate, wherein an insulating layer is fixedly disposed on the substrate, the insulating layer is provided with two silicon nanowires parallel to each other and having the same shape and size, lead-out nanowires are arranged at both ends of each of the silicon nanowires and are connected with a potentiometer, and a near-field coupling effect occurs between the silicon nanowires and the substrate when laser light irradiates the silicon nanowires, and one silicon nanowire closer to a laser light source is completely suppressed and the other silicon nanowire farther away from the laser light source maintains brightness. The present invention enables precise detection of a laser signal at a specific angle and non-contact signal transmission in a specific direction. The present invention relates to a micro nano structure sensitive to a laser beam in a specific direction. The micro nano structure comprises a substrate, wherein an insulating layer is fixedly arranged on the substrate; and two silicon wires, which are parallel to each other and are in the same shape and size, are arranged on the insulating layer, and wires are led out from two ends of each silicon wire and are connected to potential meters. When laser light irradiates the silicon wires, a near field coupling effect is generated between the silicon wires and the substrate; and one silicon wire close to a laser light source is completely inhibited, and the other silicon wire far away from the laser light source maintains the brightness thereof. By means of present invention, a laser signal at a certain specific angle can be accurately detected, and non contact signal transmission can be carried out in a specific direction.
A micro-nano structure sensitive to a laser beam in a specific direction, comprising a substrate, wherein an insulating layer is fixedly disposed on the substrate, the insulating layer is provided with two silicon wires parallel to each other and having the same shape and size, lead-out wires are arranged at both ends of each of the silicon wires and are connected with a potentiometer, and a near-field coupling effect occurs between the silicon wires and the substrate when a laser light irradiates the silicon wires, and one silicon wire closer to a laser light source is completely suppressed and the other silicon wire farther away from the laser light source maintains brightness.
Dependencies are inferred from the claim text.