Method of detecting crystallographic defects and method of growing an ingot

A method of growing an ingot, comprising:

• sampling wafer of an ingot in complying with a predetermined wafer sampling frequency;
• identifying crystallographic defects of the wafer to show the crystallographic defects of the wafer;
• characterizing observation of the crystallographic defects of the wafer and extracting a value characterizing the crystallographic defects;
• through a result of characterizing the crystallographic defects, obtaining a radial distribution of density of the wafer and categorizing the crystallographic defects;
• obtaining an isogram of the crystallographic defects of the wafer to show a crystallographic defect distribution of the whole ingot according to the value characterizing the crystallographic defects and categories of the crystallographic defects;
• and
• adjusting a technology for growing the ingot according to the crystallographic defect distribution of the whole ingot to obtain the ingot with required characteristics of defect,
• wherein the step of identifying crystallographic defects of the wafer comprises vapor phase epitaxial (VPE) deposition, gas etching, copper modification and bulk micro-defect (BMD) heat treatment.