Process liquid composition for lithography and pattern forming method using same

A process liquid composition for alleviating a lifting defect level of a photoresist pattern and for reducing the number of defects of the photoresist pattern, the composition containing a surfactant, and having a surface tension of 40 mN/m or less and a contact angle of 60° or smaller in the photoresist pattern having hydrophobicity represented by a contact angle of 70° or greater of water with respect to a photoresist surface in a photoresist pattern process, the composition comprising:

• 0.00001 to 0.1% by weight of a fluorine-based surfactant;
• 0.0001 to 0.1% by weight of a hydrocarbon-based anionic surfactant;
• 0.0001 to 0.1% by weight of an alkali substance that is selected from a group consisting of tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and mixtures thereof;
• and
• a remaining percentage by weight of water.