Semiconductor device, method of manufacturing a semiconductor device, solid-state imaging device, and electronic apparatus
AssigneeSony Group Corporation
InventorsHideaki Togashi, Kosuke Nakanishi
Life of this patent
Estimating the term…
Abstract
A semiconductor device of the present disclosure includes: a semiconductor element disposed on a first surface side of a semiconductor substrate; a through-electrode that is provided through the semiconductor substrate in a thickness direction of the semiconductor substrate and introduces charge obtained in the semiconductor element to a second surface side of the semiconductor substrate; and an amplifier transistor that outputs an electrical signal based on the charge introduced by the through-electrode, the amplifier transistor using the through-electrode as a gate electrode and including a source region and a drain region around the through-electrode.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate having a light incident side and a second side opposite to the light incident side;
- a semiconductor element disposed on the light incident side of the semiconductor substrate;
- an amplifier transistor, wherein a gate electrode of the amplifier transistor is disposed on the second side of the semiconductor substrate;
- and
- a drain region of the amplifier transistor disposed on the light incident side of the semiconductor substrate, wherein a power supply potential VDD is applied to the drain region from a power supply line via a wire.
An electronic apparatus, comprising:
- a solid-state imaging device including:
- a semiconductor substrate having a light incident side and a second side opposite to the light incident side;
- a semiconductor element disposed on the light incident side of the semiconductor substrate;
- an amplifier transistor, wherein a gate electrode of the amplifier transistor is disposed on the second side of the semiconductor substrate;
- and
- a drain region of the amplifier transistor disposed on the light incident side of the semiconductor substrate, wherein a power supply potential VDD is applied to the drain region from a power supply line via a wire.
A solid-state imaging device including:
- a semiconductor substrate having a light incident side and a second side opposite to the light incident side;
- a semiconductor element disposed on the light incident side of the semiconductor substrate;
- an amplifier transistor, wherein a gate electrode of the amplifier transistor is disposed on the second side of the semiconductor substrate;
- and
- a drain region of the amplifier transistor disposed on the light incident side of the semiconductor substrate, wherein a power supply potential VDD is applied to the drain region from a power supply line via a wire.
Dependencies are inferred from the claim text.