Semiconductor device

A semiconductor device comprising:

• a semiconductor element having a first electrode and a second electrode on a first surface facing in a first direction, and a third electrode on a second surface facing in an opposite direction to the first direction, wherein continuity between the second electrode and the third electrode is controlled by a voltage applied to the first electrode;
• a conductive first lead that is electrically connected to the first electrode via a first conductive bonding material and extends beyond a periphery of the first surface while keeping a certain gap from the first surface;
• a conductive second lead that is electrically connected to the second electrode via a second conductive bonding material and extends beyond the periphery of the first surface while keeping a certain gap from the first surface;
• and
• a conductive third lead that is electrically connected to the third electrode and extends along the second surface beyond a periphery of the second surface, wherein the third lead bends outside the periphery toward the first direction;
• wherein the periphery of the first surface of the semiconductor element has edges, at least one of which faces neither the first lead nor the second lead,
• portions of the first lead and the second lead that face the periphery of the first surface of the semiconductor element are provided with respective grooves,
• the first electrode is formed inside the periphery of the first surface, a periphery of the first lead, and the groove of the first lead, and
• the second electrode is formed inside the periphery of the second surface, a periphery of the second lead, and the groove of the second lead.