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US 12,394,709 B2Granted
Method for fabricating semiconductor device with fuse structure
AssigneeNanya Technology Corporation
InventorHsih-Yang Chiu
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Abstract
A method for fabricating a semiconductor device is provided. The method includes providing a substrate; forming a fuse element within the substrate and extending from an upper surface of the substrate; and forming a fuse medium in contact with the fuse element, wherein the fuse medium is spaced apart from the upper surface of the substrate.
Claims8
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a first doped region within the substrate, wherein an upper surface of the first doped region is spaced apart from an upper surface of the substrate;
- forming a fuse element penetrating an upper surface and a lower surface of the first doped region, wherein the first doped region surrounds a lateral surface of the fuse element;
- and
- forming a second doped region between the upper surface of the substrate and the first doped region, wherein a first dopant concentration of the first doped region is different from a second dopant concentration of the second doped region.
2 more elements
Dependencies are inferred from the claim text.