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US 12,394,630 B2Granted
In situ generation process and system
AssigneeASM IP Holding B.V.
InventorsVarun Sharma, Michael Givens
Life of this patent
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Abstract
The present disclosure is directed to methods in situ generation of a hydrogen halide for use in an etching process for selective etching of a material from other(s) on a surface layer of a substrate, to methods of etching utilizing the in situ generated hydrogen halide, and to systems carrying the out the disclosed processes.
Claims16
A method for the in situ generation of an etchant in a semiconductor processing apparatus, the method comprising:
- generating in situ the etchant in the semiconductor processing apparatus in the form of a hydrogen halide generated from a precursor halide compound in the presence of a reactant comprising hydrogen or hydrogen and oxygen,
- wherein the precursor halide compound comprises a member selected from the group consisting of a metal halide, a non-metal halide, a metalloid halide, and combinations thereof;
- and
- wherein the precursor halide compound comprises a mixed halide compound or an oxyhalide compound.
1 more element
A method for etching an etchable material from a substrate in a semiconductor processing apparatus, the method comprising:
- generating in situ a hydrogen halide from a precursor halide compound in the presence of a reactant comprising hydrogen or hydrogen and oxygen;
- and
- selectively etching the etchable material relative to another material on the substrate from a surface layer of the substrate in the semiconductor processing apparatus via the hydrogen halide,
- wherein the precursor halide compound comprises a member selected from the group consisting of a metal halide, a non-metal halide, a metalloid halide, and combinations thereof, and
- wherein the precursor halide compound comprises a mixed halide compound or an oxyhalide compound.
2 more elements
Dependencies are inferred from the claim text.