Impedance control of local areas of a substrate during plasma deposition thereon in a large PECVD chamber

A plasma processing system, comprising:

• a plasma processing chamber;
• at least one plasma generating radio frequency (RF) coil within an upper portion of the plasma processing chamber;
• a RF power source;
• a RF impedance matching network coupled between the RF power source and the at least one plasma generating RF coil;
• a frequency detector;
• first RF voltage and RF current detectors electrically coupled between the RF impedance matching network and the at least one plasma generating RF coil;
• a substrate support disposed within the plasma processing chamber and below the at least one plasma generating RF coil, the substrate support comprising a body having a plurality of openings formed between a substrate support surface and a backside opposite the substrate support surface;
• a plurality of substrate support pins deposed in the plurality of openings of the substrate support, wherein when the substrate support is in a raised position, top portions of the plurality of substrate support pins are planar with or recessed below the substrate support surface, and when in a lowered position the substrate support pins extend above the substrate support surface;
• a plurality of adjustable impedance circuits in electrical communications with associated ones of the plurality of substrate support pins;
• and
• second RF voltage and RF current detectors electrically coupled to each of the plurality of adjustable impedance circuits for detecting RF voltage and RF current thereof.