Back to results
US 12,393,114 B2Granted
Semiconductor apparatus and method of operating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen Lo, Shih-Ming Chang, Chun-Hung Liu
Life of this patent
Estimating the term…
Abstract
A method includes generating an electron beam from a radiation source; modifying an energy distribution of the electron beam through a first shaping aperture; and exposing a substrate to portions of the electron beam passing through the first shaping aperture. The first shaping aperture comprises blocking strips with a plurality of slots therebetween, a frame surrounding the blocking strips, and a diagonal support connected to the frame and one of the blocking strips.
Claims20
A method, comprising:
- generating an electron beam from a radiation source;
- modifying an energy distribution of the electron beam through a first shaping aperture, wherein the first shaping aperture comprises:
- blocking strips with a plurality of slots therebetween;
- a frame surrounding the blocking strips;
- and
- a diagonal support connected to the frame and one of the blocking strips, wherein the blocking strips, the frame, and the diagonal support collectively form an L-shape opening within the first shaping aperture;
- and
- exposing a substrate to portions of the electron beam passing through the first shaping aperture.
5 more elements
A method, comprising:
- generating an electron beam from a radiation source;
- modifying an energy distribution of the electron beam through a first shaping aperture, wherein the first shaping aperture comprises:
- an upper barrier structure having first blocking strips arranged along a direction;
- a lower barrier structure having second blocking strips arranged along the direction, wherein one of the upper barrier structure and one of the lower barrier structure includes an L-shape opening;
- and
- exposing a substrate to portions of the electron beam passing through the first shaping aperture.
3 more elements
A method, comprising:
- generating an electron beam from a radiation source, wherein the electron beam comprises a first portion and a second portion;
- reducing an energy intensity of the second portion of the electron beam by blocking the second portion of the electron beam with a barrier structure, wherein the barrier structure comprises blocking strips separated from each other, wherein the first portion of the electron beam passes through a region surrounding the barrier structure, and wherein the first portion of the electron beam has an L-shape top profile;
- and
- exposing a substrate to the first and second portions of the electron beam.
1 more element
Dependencies are inferred from the claim text.