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US 12,392,023 B1Granted
Methods and apparatus for depositing amorphous indium tin oxide film
AssigneeApplied Materials, Inc.
InventorsYaoying Zhong, Siew Kit Hoi, Palaniappan Chidambaram, Jaysen Chiam, Li Ying Choo, Jay Min Soh, Xiao Tan, Haomin Xu
Life of this patent
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Abstract
Methods and apparatus for processing a substrate in a process chamber include: positioning a substrate on a substrate support in a process volume so that the substrate is opposite a sputter target comprising indium tin oxide; flowing a plasma-forming gas into the process volume; and sputtering the indium tin oxide onto the substrate while applying AC bias to the substrate.
Claims18
A method of processing a substrate in a process chamber, the method comprising:
- positioning a substrate on a substrate support in a process volume so that the substrate is opposite a sputter target comprising indium tin oxide;
- flowing a plasma-forming gas into the process volume;
- and
- sputtering the indium tin oxide onto the substrate while applying AC bias to the substrate, wherein flowing the plasma-forming gas includes introducing the plasma-forming gas through a plurality of holes in process kit shields comprising:
- a lower shield having a first annular body, a first upper flange at a top of the first annular body, and a channel at a bottom of the first annular body, the first annular body having a plurality of first holes surrounding an opening configured to surround a substrate during substrate processing;
- and
- an upper shield having a second annular body and a second upper flange configured to seat on the first upper flange, the second annular body having an end extending into the channel, the end spaced from the first annular body, the second annular body having a plurality of second holes, the second holes being spaced radially inward and below the first holes,
- wherein the first holes and the second holes are configured to define a flow path for the plasma-forming gas from a location below the substrate support through the first holes and the second holes to a location above the substrate.
5 more elements
A process chamber for processing a substrate, the process chamber comprising:
- a chamber body having walls defining a processing volume;
- a substrate support having a support surface configured to support a substrate within the processing volume;
- a power source coupled to the substrate support, the power source configured to provide an AC bias to the substrate;
- a pulsed DC power supply configured to be coupled to a sputter target when the sputter target is installed during substrate processing;
- a controller configured to:
- position the substrate on the support surface;
- flow a plasma-forming gas into the process volume;
- and
- sputter indium tin oxide, from the sputter target comprising indium tin oxide, onto the substrate while applying AC bias to the substrate;
- and
- process kit shields comprising:
- a lower shield having a first annular body, a first upper flange at a top of the first annular body, and a channel at a bottom of the first annular body, the first annular body having a plurality of first holes surrounding the substrate support;
- and
- an upper shield having a second annular body and a second upper flange configured to seat on the first upper flange, the second annular body having an end extending into the channel, the end spaced from the first annular body, the second annular body having a plurality of second holes, the second holes being spaced radially inward and below the first holes,
- wherein the first holes and the second holes are configured to define a flow path for a plasma-forming gas from a location below the substrate support through the first holes and the second holes to a location above the substrate.
12 more elements
Process kit shields for a chamber for processing a substrate, the process kit shields comprising:
- a lower shield having a first annular body, a first upper flange at a top of the first annular body, and a channel at a bottom of the first annular body, the first annular body having a plurality of first holes surrounding an opening configured to surround a substrate during substrate processing;
- and
- an upper shield having a second annular body and a second upper flange configured to seat on the first upper flange, the second annular body having an end extending into the channel, the end spaced from the first annular body, the second annular body having a plurality of second holes, the second holes being spaced radially inward and below the first holes,
- wherein the first holes and the second holes are configured to define a flow path for a plasma-forming gas from a location below the substrate support through the first holes and the second holes to a location above the substrate.
1 more element
Dependencies are inferred from the claim text.