US 12,391,545 B2Granted

Semiconductor device and method for fabricating the same

AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.

InventorsChun-Wen Cheng, Yi-Chuan Teng, Cheng-Yu Hsieh, Lee-Chuan Tseng, Shih-Chang Liu, Shih-Wei Lin

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Abstract

The present disclosure provides a semiconductor structure and a method for fabricating semiconductor structure. The semiconductor structure includes a first device, configured to be a complementary metal oxide semiconductor device, wherein the first device includes a substrate, a multi-layer structure disposed on the substrate, a first hole, defined between a first end with a first circumference and a second end with a second circumference, a second hole, aligned to the first hole and defined between the second end and a third end with a third circumference, wherein the third circumference is larger than the first circumference and the second circumference, and a second device, configured to be a micro-electro mechanical system device and bonded to the first device, wherein a first chamber is between the first device and the second device, and the first end links with the first chamber, and a sealing object configured to seal the second hole.

Claims20

Dependent claims

A semiconductor structure, comprising:

a first device, configured to be a complementary metal oxide semiconductor (CMOS) device, wherein the first device comprises:
a substrate;
a multi-layer structure disposed on the substrate and included a stacked structure defined by a plurality of metal layers insulated by a plurality of dielectric layers;
a first hole, extended through the multi-layer structure and defined between a first end with a first circumference and a second end with a second circumference;
and
a second hole, aligned to the first hole and defined between the second end and a third end with a third circumference, wherein the third circumference is larger than the first circumference and the second circumference;
a second device, configured to be a micro-electro mechanical system (MEMS) device and bonded to the first device, wherein a first chamber is between the first device and the second device, and the first end links with the first chamber;
and
a first sealing object, configured to seal the second hole,
wherein the second hole includes a sidewall, a first portion of the sidewall of the second hole is exposed from the first sealing object, a second portion of the sidewall is in contact with the first sealing object, and a second chamber is defined by the first portion of the sidewall and disposed between the first sealing object and the second end.

7 more elements

A semiconductor structure, comprising:

a first device, wherein the first device comprises:
a substrate;
a multi-layer structure disposed on the substrate;
a first hole, defined between a first end with a first circumference and a second end with a second circumference;
a second hole, aligned to the first hole and defined between the second end and a third end with a third circumference, wherein the third circumference is larger than the first circumference and the second circumference;
a scribe region disposed proximal to the second hole;
a third hole disposed at the scribe region and extended through the multi-layer structure;
and
a fourth hole disposed at the scribe region, adjacent to the second hole and align with the third hole;
a second device, wherein a first chamber is between the first device and the second device, and the first end links with the first chamber;
a first sealing object, configured to seal the second hole, wherein the first sealing object comprises a first portion in the second hole and a second portion disposed on an uppermost surface of the substrate;
and
a second sealing object disposed within the third hole and the fourth hole,
wherein the second hole includes a sidewall, a first portion of the sidewall of the second hole is exposed from the first sealing object, a second portion of the sidewall is in contact with the first sealing object, and a second chamber is defined by the first portion of the sidewall and disposed between the first sealing object and the second end.

11 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/808,641Filed 24 Jun 2022 · continuation
Priority: 6 Nov 2015
Published: US 2022/0315414 A16 Oct 2022
Granted: 19 Aug 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification15 codes

B81B 7/008
Microstructural systems ; Auxiliary parts of microstructural devices or systems: mEMS characterised by an electronic circuit specially adapted for…
B81B 3/0005
Arrangements for avoiding sticking of the flexible or moving parts: anti-stiction coatings
B81B 7/0041
For maintaining a controlled atmosphere inside of the chamber containing the MEMS: maintaining a controlled atmosphere with techniques not…
B81C 1/00277
Processes for packaging MEMS devices: for maintaining a controlled atmosphere inside of the cavity containing the MEMS

Family

Application14/935,318Parent of this continuation · filed 6 Nov 2015
Application15/407,676Parent of this continuation · filed 17 Jan 2017
US 9,567,208 B1Parent of this continuation · filed 14 Feb 2017
US 2022/0315414 A1Pre-grant publication · published 6 Oct 2022
US 11,434,129 B2Parent of this continuation
US 2017/0129772 A1Published application
US 12,391,545 B2This patent

From the US filing history. Foreign family members aren’t listed.