Josephson junction using molecular beam epitaxy
AssigneeAmbature, Inc.
InventorsMichael S. Lebby, Davis H. Hartmann
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Abstract
According to various implementations of the invention, a vertical Josephson Junction device may be realized using molecular beam epitaxy (MBE) growth of YBCO and PBCO epitaxial layers in an a-axis crystal orientation. Various implementations of the invention provide improved vertical JJ devices using SiC or LSGO substrates; GaN, AlN, or MgO buffer layers; YBCO or LSGO template layers; YBCO conductive layers and various combinations of barrier layers that include PBCO, NBCO, and DBCO. Such JJ devices are simple to fabricate with wet and dry etching, and allow for superior current flow across the barrier layers.
Claims10
A Josephson Junction comprising:
- a first conductive layer and oriented in the a-axis orientation, wherein the first conductive layer is a superconducting perovskite;
- a barrier layer adjacent the first conductive layer;
- and
- a second conductive layer adjacent the barrier layer and oriented in the a-axis orientation, wherein the second conductive layer is a superconducting perovskite;
- wherein the first conductive layer, the second conductive layer and the barrier layer are all formed via molecular beam epitaxy.
A Josephson Junction comprising:
- a first conductive layer oriented in the a-axis orientation, wherein the first conductive layer is a superconducting perovskite;
- a barrier layer adjacent the first conductive layer, wherein the barrier layer comprises a perovskite;
- a second conductive layer adjacent the barrier layer and oriented in the a-axis orientation, wherein the second conductive layer is a superconducting perovskite;
- wherein the first conductive layer, the second conductive layer and the barrier layer are all formed via molecular beam epitaxy.
Dependencies are inferred from the claim text.