Piezoelectric device and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChih-Ming Chen
Life of this patent
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Abstract
A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.
Claims20
A piezoelectric device, comprising:
- a substrate;
- a metal-insulator-metal element disposed on the substrate, wherein the metal-insulator-metal element comprises a bottom electrode, a top electrode and a piezoelectric layer between the top electrode and the bottom electrode;
- a hydrogen blocking layer covering the metal-insulator-metal element, wherein the hydrogen blocking layer includes a first hydrogen blocking layer, a second hydrogen blocking layer and a third hydrogen blocking layer sequentially stacked on the substrate, the first hydrogen blocking layer contacts a top surface of the top electrode, the second hydrogen blocking layer contacts a top surface of the piezoelectric layer and a sidewall of the top electrode, and the third hydrogen blocking layer contacts a top surface of the bottom electrode and a sidewall of the piezoelectric layer;
- a passivation layer covering the hydrogen blocking layer and the metal-insulator-metal element;
- a first contact terminal electrically connected to the metal-insulator-metal element;
- and
- a second contact terminal electrically connected to the metal-insulator-metal element.
A piezoelectric device, comprising:
- a substrate;
- a bottom electrode disposed on the substrate;
- a piezoelectric layer disposed on the bottom electrode and exposing a portion of a top surface of the bottom electrode;
- a top electrode disposed on the piezoelectric layer and exposing a portion of a top surface of the piezoelectric layer;
- a hydrogen blocking layer disposed on the top electrode and over the substrate, wherein the hydrogen blocking layer comprises a first hydrogen blocking layer, a second hydrogen blocking layer and a third hydrogen blocking layer, the second hydrogen blocking layer is between the first hydrogen blocking layer and the third hydrogen blocking layer, a sidewall of the first hydrogen blocking layer is aligned with a sidewall of the top electrode, a sidewall of the second hydrogen blocking layer is aligned with a sidewall of the piezoelectric layer, and a sidewall of the third hydrogen blocking layer is aligned with a sidewall of the bottom electrode;
- a passivation layer covering the hydrogen blocking layer, the top electrode, the piezoelectric layer and the bottom electrode;
- a first contact terminal contacting the bottom electrode;
- and
- a second contact terminal contacting the top electrode.
A method of forming a piezoelectric device, comprising:
- sequentially forming a first conductive layer, a piezoelectric material layer and a second conductive layer on a substrate;
- forming a first hydrogen blocking material layer on the second conductive layer;
- removing portions of the first hydrogen blocking material layer and the second conductive layer in a first patterning process to form a first hydrogen blocking layer and a top electrode;
- forming a second hydrogen blocking material layer on the first hydrogen blocking layer;
- removing portions of the second hydrogen blocking material layer and the piezoelectric material layer in a second patterning process to form a second hydrogen blocking layer and a piezoelectric layer;
- forming a third hydrogen blocking material layer on the piezoelectric layer and on the second hydrogen blocking layer;
- and
- removing portions of the third hydrogen blocking material layer and the first conductive layer in a third patterning process to form a third hydrogen blocking layer and a bottom electrode.
Dependencies are inferred from the claim text.