Method for improving the ohmic contact behavior between a contact grid and an emitter layer of a silicon solar cell

A method for improving the ohmic-contact behavior between a contact grid and an emitter layer of a silicon solar cell, the method comprising:

• performing a treatment step comprising:
• applying a first voltage directed contrary to the forward direction of the silicon solar cell that has a value lower than a breakdown voltage of the silicon solar cell between the contact grid and a back contact of the silicon solar cell using a voltage source and a contacting device connected thereto;
• and
• while applying the first voltage, guiding a point light source is over a sun-facing side of the silicon solar cell thereby illuminating treatment sections of sub-areas of the sun-facing side and thus inducing a treatment current flow in a respective one of the sub-areas, wherein the treatment current flow has a current density of 200 A/cm2 to 20,000 A/cm2 in relation to the treatment sections and acts on one of the respective sub-areas for 10 ns to 10 ms;
• performing a measurement step before and/or after the treatment step, the measurement step comprising:
• applying a second voltage between the contact grid and the back contact using the voltage source and the contacting device;
• and
• while applying the second voltage, illuminating measurement sections of the sub-areas of the sun-facing side of the silicon solar cell using the point light source and thus inducing a measurement current flow in a respective one of the sub-areas, wherein the measurement current flow has a current density of 1 mA/cm2 to 500 mA/cm2 in relation to a respective one of the measurement sections;
• sensing a current strength of the measurement current flow using an ammeter;
• assigning the current strength of the measurement current flow to the respective one of the measurement sections;
• and
• storing the current strength of the measurement current flow.