Back to results
US 12,389,640 B2Granted
High voltage avalanche diode for active clamp drivers
AssigneeTexas Instruments Incorporated
InventorsHenry Litzmann Edwards, Joseph Maurice Khayat, Archana Venugopal
Life of this patent
Estimating the term…
Abstract
An integrated circuit includes a shallow P-type well (SPW) below a surface of a semiconductor substrate and a shallow N-type well (SNW) below the surface. The SPW forms an anode of a diode and the SNW forms a cathode of the diode. The SNW is spaced apart from the SPW by a well space region; and a thin field relief oxide structure lies over the well space region.
Claims18
A method of fabricating an integrated circuit comprising:
- forming a thin field relief oxide structure in a semiconductor substrate;
- forming a shallow N-type well (SNW) in the semiconductor substrate adjacent a first side of the thin field relief oxide structure;
- and
- forming a shallow P-type well (SPW) in the semiconductor substrate adjacent an opposite second side of the thin field relief oxide structure, the SNW and the SPW each having a peak dopant concentration under the thin field relief oxide structure and being spaced apart under the thin field relief oxide structure by the semiconductor substrate.
1 more element
A method of forming an integrated circuit comprising:
- forming a diode in or over a semiconductor substrate, the forming including:
- forming a P-type well and an N-type well extending into a semiconductor substrate and spaced apart by a well space region;
- forming an anode terminal on the P-type well and a cathode terminal on the N-type well;
- forming a shallow-trench isolation (STI) structure that surrounds the anode terminal and the cathode terminal;
- and
- forming a field relief oxide structure between the anode terminal and the cathode terminal, the field relief oxide structure having a thickness no greater than one-half a thickness of the STI structure.
3 more elements
A method of forming an electronic device, comprising:
- forming a shallow P-type well (SPW) in a semiconductor substrate, the SPW providing an anode of a diode;
- forming a shallow N-type well (SNW) in the semiconductor substrate and spaced apart from the SPW, the SNW providing a cathode of the diode, the SNW separated from the SPW by a well space region;
- forming a field relief oxide structure at a surface of the semiconductor substrate over the well space region;
- forming an N-doped channel-stop region within the SNW with a peak dopant concentration below the surface;
- and
- forming a P-doped channel-stop region within the SPW with a peak dopant concentration below the surface.
3 more elements
Dependencies are inferred from the claim text.