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US 12,389,518 B2Granted
Method of manufacturing integrated circuit
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChansyun David Yang, Keh-Jeng Chang, Chan-Lon Yang
Life of this patent
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Abstract
A method for generating an extreme ultraviolet (EUV) radiation includes simultaneously irradiating two or more target droplets with laser light in an EUV radiation source apparatus to produce EUV radiation and collecting and directing the EUV radiation produced from the two or more target droplet by an imaging mirror.
Claims20
A method of manufacturing an integrated circuit, comprising:
- generating an ionizing laser beam;
- dividing the laser beam into a first laser beam and a second laser beam;
- passing the first and second laser beams respectively through a first slit and a second slit formed in a collector mirror to form a first pattern of bright fringes in a zone of excitation;
- generating a plurality of droplets to simultaneously drop through the first pattern of bright fringes to generate extreme ultraviolet (EUV) light, the collector mirror directing the EUV light to a reflective mask to generate a patterned beam of light;
- and
- directing the patterned beam of light onto a photoresist formed on a semiconductor substrate.
3 more elements
A method of manufacturing an integrated circuit, comprising:
- processing an ionizing laser beam into a plurality of bright fringes in a zone of excitation;
- simultaneously passing a plurality of droplets through the plurality of bright fringes to generate extreme ultraviolet (EUV) light;
- focusing and directing the generated EUV light onto a reflective mask to generate a patterned beam of light;
- and
- exposing a photoresist formed on a semiconductor substrate to the patterned beam of light.
2 more elements
A method of manufacturing an integrated circuit, comprising:
- passing a first ionizing laser beam through a first slit and passing a second ionizing laser beam through a second slit to collectively generate a first plurality of bright fringes in a zone of excitation;
- simultaneously passing separate droplets through the first plurality of bright fringes to generate extreme ultraviolet (EUV) light;
- reflecting the EUV light off a reflective mask to generate a patterned beam of light;
- and
- exposing a photoresist formed on a semiconductor substrate to the patterned beam of light.
2 more elements
Dependencies are inferred from the claim text.