Semiconductor wafers using front-end processed wafer global geometry metrics

A method for processing semiconductor wafers, the method comprising:

• providing a first semiconductor wafer processed by a front-end process tool;
• obtaining measurement data from scan lines along a surface of the first semiconductor wafer, the measurement data of each scan line including a thickness profile and a surface profile;
• determining a center plane of the wafer based on the measurement data of the scan lines;
• generating, for each scan line, a raw shape profile based on the measurement data of the scan line and the center plane of the wafer;
• generating, for each scan line, an ideal shape profile based on polynomial regression of the raw shape profile;
• generating, for each scan line, a Gapi profile based on the raw shape profile and the ideal shape profile;
• calculating a Gapi value of the first semiconductor wafer based on the Gapi profiles of the scan lines;
• determining whether the Gapi value of the first semiconductor wafer is within a predetermined threshold;
• if the Gapi value of the first semiconductor wafer is not within the predetermined threshold:
• tuning the front-end process tool based on at least one of the Gapi profiles of the scan lines of the first semiconductor wafer;
• and
• processing a second semiconductor wafer with the tuned front-end process tool;
• and
• if the Gapi value of the first semiconductor wafer is within the predetermined threshold, sorting the first semiconductor wafer for polishing.