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US 12,385,142 B2Granted
Etchant composition for titanium-containing metal layer and etching method using the same
AssigneeEnf Technology Co., Ltd.
InventorsSang Seung Park, Yang Ryoung Kim, Bo Yeon Lee, Min Gyeong Jeong, Se Hoon Kim
Life of this patent
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Abstract
Provided are an etchant composition for a titanium-containing metal layer, and a method using the same, which may selectively etch the titanium-containing metal layer without affecting the quality of other films during a process of manufacturing semiconductor and display devices, and thus, may increase productivity and reliability with improved etching characteristics in a semiconductor manufacturing process.
Claims16
An etchant composition for a titanium-containing metal layer comprising:
- a polyvalent phosphonic acid or a salt thereof, an inorganic base, a sulfonic acid-based polymer compound, hydrogen peroxide, and a remaining amount of water, wherein the sulfonic acid-based polymer compound is included at 0.001 to 0.1 wt %.
Dependencies are inferred from the claim text.