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US 12,385,126 B2Granted
Sputtering target, method for producing same, and method for producing sputtering film using sputtering target
AssigneesTosoh Corporation, Tosoh Speciality Materials Corporation
InventorsDaiki Shono, Taiga Kondo, Masami Mesuda, Kenichi Itoh, Koichi Hanawa
Life of this patent
Estimating the term…
Abstract
A sputtering target includes crystal grains, has a content of an amorphous phase of 3% by volume or less, and contains at least one metal selected from the group consisting of chromium, molybdenum, and chromium-molybdenum alloys.
Claims16
A sputtering target of chromium, molybdenum, or chromium molybdenum alloys, wherein the sputtering target comprises crystal grains, the sputtering target has a content of an amorphous phase of 3% by volume or less, and a combined concentration of chromium and molybdenum of the sputtering target exceeds 99.6%.
Dependencies are inferred from the claim text.