Method for capturing silicon at low hourly space velocity
AssigneeIfp Energies Nouvelles
InventorsNicolas Legagneux, Marie-Claire Marion, Karin Barthelet
Life of this patent
Estimating the term…
Abstract
The present invention relates to a process for trapping silicon compounds in a gaseous or liquid feedstock, comprising bringing the feedstock into contact with a trapping mass with a liquid hourly space velocity LHSV of less than 5 h−1 or a gas hourly space velocity GHSV of less than 500 h−1.
Claims20
A process for trapping Silicon compounds in a gaseous or liquid feedstock, comprising bringing the feedstock into contact with a trapping mass with a liquid hourly space velocity LHSV of less than 5 h−1 or a gas hourly space velocity GHSV of less than 500 h−1, said trapping mass comprising a metal from the group VIB metals in a content, expressed as oxide, being less than 6% by weight, relative to the total weight of the trapping mass and a metal from the group VIII metals.
Dependencies are inferred from the claim text.