Photodetector element, manufacturing method for photodetector element, and image sensor

A photodetector element comprising:

• a photoelectric conversion layer that contains aggregates of semiconductor quantum dots between a first electrode layer and a second electrode layer,
• wherein the first electrode layer is provided on a light incident side with respect to the second electrode layer,
• wherein the photoelectric conversion layer contains a ligand that is coordinated to the semiconductor quantum dot,
• wherein the ligand contains a ligand containing a halogen atom and a polydentate ligand containing two or more coordination moieties, and the ligand containing a halogen atom is a salt of a metal atom and the halogen atom, and
• a wavelength λ (nm) of target light to be detected by the photodetector element and an optical path length Lλ (nm) of light having the wavelength λ from a surface of the second electrode layer on a side of the photoelectric conversion layer to a surface of the photoelectric conversion layer on a side of the first electrode layer satisfy a relationship of the following Expression (1);
• 0.05+m/2≤Lλ/λ≤0.35+m/2 (1)
• in the expression, λ is the wavelength of the target light to be detected by the photodetector element,
• Lλ is the optical path length of the light having the wavelength λ from a surface of the second electrode layer on a side of the photoelectric conversion layer to a surface of the photoelectric conversion layer on a side of the first electrode layer, and
• m is an integer of 0 or more.