Atomic layer deposition with plasma source

A method comprising:

• operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions;
• loading at least one substrate into the reaction chamber via a transfer chamber, wherein the transfer chamber is between a remote plasma source and the reaction chamber;
• guiding carrier gas from a carrier gas source to the remote plasma source along a carrier gas line implemented as a single gas line and providing plurality of three-way pulsing valves in the carrier gas line;
• guiding a non-metal precursor through a capillary to an input of one of the three-way pulsing valves and pulsing the non-metal precursor in the three-way pulsing valve upstream of the remote plasma source into a carrier gas flow;
• generating radicals from the non-metal precursor in the remote plasma source;
• providing radicals from the remote plasma source as a top to bottom flow into the reaction chamber through a vertically-deformable in-feed part surrounded by the transfer chamber and providing a vacuum in the space between the transfer chamber and the vertically deformable in-feed part, wherein the vertically deformable in-feed part is fitted against a top of the reaction chamber, which is a sealed reaction chamber;
• and
• providing a metal precursor into the reaction chamber from the side of the reaction chamber.