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US 12,382,837 B2Granted
Method for characterizing magnetic device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsI Cheng Chang, Tsann Lin
Life of this patent
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Abstract
The present disclosure provides a method for characterizing magnetic properties of a target layer, including providing a first sample having a first structure, providing a second sample having a target layer over the first structure, obtaining a first magnetic property of the first sample, obtaining a second magnetic property of the second sample, and deriving a third magnetic property of the target layer according to the first magnetic property and the second magnetic property.
Claims20
A method for characterizing a magnetic property of a target layer, comprising:
- providing a first sample having a first structure;
- providing a second sample having a target layer over the first structure;
- obtaining a first magnetic property of the first sample;
- obtaining a second magnetic property of the second sample, wherein at least two magnetic fields perpendicular to a surface of the target layer is applied on the target layer sequentially, and the at least two magnetic fields perpendicular to the surface of the target layer having different ranges of magnetic field strength;
- deriving a third magnetic property of the target layer according to the first magnetic property and the second magnetic property;
- and
- identifying a spin-flop strength (HSF) and an antiparallel-coupling strength (HAPC) of the target layer, wherein the antiparallel-coupling strength is greater than a coercivity of a hard-bias layer (HC_HBL) in the target layer,
- wherein a magnetization of the hard-bias layer and a magnetization of a reference layer in the target layer spin flopped simultaneously when a magnetic field strength of the magnetic fields increased to exceed the spin-flop strength.
5 more elements
A method for characterizing a magnetic property of a target layer, comprising:
- providing a first sample having a first structure;
- providing a second sample having a target layer over the first structure, wherein the target layer comprises a magnetic tunneling junction (MTJ) stack;
- obtaining a magnetic parameter of the MTJ stack, comprising:
- obtaining at least one first hysteresis loop of the first sample in a first magnetic field perpendicular to the MTJ stack and a second magnetic field perpendicular to the MTJ stack sequentially, wherein a magnetic field strength of the first magnetic field is different from a magnetic field strength of the second magnetic field;
- obtaining a second hysteresis loop of the second sample in a third magnetic field;
- and
- subtracting the second hysteresis loop from the at least one first hysteresis loop;
- and
- identifying a spin-flop strength (HSF) and an antiparallel-coupling strength (HAPC) of the target layer, wherein the antiparallel-coupling strength is greater than a coercivity of a hard-bias layer (HC_HBL) in the target layer,
- wherein a magnetization of the hard-bias layer and a magnetization of a reference layer in the target layer spin flopped simultaneously when the magnetic field strength of the first magnetic field or the magnetic field strength of the second magnetic field increased to exceed the spin-flop strength.
7 more elements
A method for characterizing a magnetic property of a target layer, comprising:
- providing a first sample having a first structure;
- providing a second sample having a target layer over the first structure, wherein the target layer comprises a free layer of a magnetic tunneling junction (MTJ) stack;
- obtaining a magnetic parameter of the free layer, comprising:
- obtaining a first hysteresis loop of the first sample in a magnetic field parallel to the MTJ stack;
- obtaining at least one second hysteresis loop of the second sample in a first magnetic field perpendicular to the MTJ stack and a second magnetic field perpendicular to the MTJ stack sequentially, wherein a magnetic field strength of the first magnetic field is different from a magnetic field strength of the second magnetic field;
- and
- subtracting the at least one second hysteresis loop from the first hysteresis loop;
- and
- identifying a spin-flop strength (HSF) and an antiparallel-coupling strength (HAPC) of the target layer, wherein the antiparallel-coupling strength is greater than a coercivity of a hard-bias layer (HC_HBL) in the target layer,
- wherein a magnetization of the hard-bias layer and a magnetization of a reference layer in the target layer spin flopped simultaneously when the magnetic field strength of the first magnetic field or the magnetic field strength of the second magnetic field increased to exceed the spin-flop strength.
7 more elements
Dependencies are inferred from the claim text.