Semiconductor structure and method of fabricating the same

A method of manufacturing a semiconductor structure, comprising:

• providing a substrate having a first conductivity type, and having a first surface and a second surface opposite to the first surface;
• diffusing from the first surface of the substrate into the substrate to form a first diffusion layer having the first conductivity type;
• diffusing from the second surface of the substrate into the substrate to form a second diffusion layer having a second conductivity type, wherein diffusing from the second surface of the substrate into the substrate to form the second diffusion layer further comprises diffusing from the second surface of the substrate into the substrate to form a diffusion layer having the first conductivity type, removing at least a portion of the diffusion layer, and inverting the rest of the diffusion layer from the first conductivity type to the second conductivity type through a diffusion process;
• forming a plurality of diffusion regions having the first conductivity type in the second diffusion layer;
• forming a first electrode layer on and in direct contact with the first diffusion layer;
• and
• forming a second electrode layer on the second diffusion layer, wherein the second electrode layer is in contact with the plurality of diffusion regions, and wherein:
• the second diffusion layer is coupled to the plurality of diffusion regions through the second electrode layer;
• and
• the substrate is between the first electrode layer and the second electrode layer.