US 12,381,384 B2Granted

Motor drive circuit, motor system and electric device

AssigneeRohm Co., Ltd.

InventorsYoshito Otaguro, Ryota Kobayashi

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Abstract

The present disclosure provides a motor drive circuit. The motor drive circuit includes a first-phase half bridge circuit and a second-phase half bridge circuit. The first and second phase half bridge circuits include first-phase and second-phase high-side FETs and first-phase and second-phase low-side FETs. The first-phase and second-phase high-side FETs are configured to apply a first voltage to a first end. A second end of the first-phase and second-phase high-side FETs is connected to the first end. A second voltage lower than the first voltage is applied to the second end. The first-phase low-side FET or the second-phase high-side FET is disposed between the first-phase high-side FET and the second-phase low-side FET. The second-phase low-side FET or the first-phase high-side FET is disposed between the first-phase low-side FET and the second-phase high-side FET.

Claims21

Dependent claims

A motor drive circuit, comprising:

a first phase half-bridge circuit;
and
a second phase half-bridge circuit, wherein
the first phase half-bridge circuit includes:
a first phase high-side FET, configured to have a source to which a first voltage is applied;
and
a first phase low-side FET, configured to have a drain connected to a drain of the first phase high-side FET, and a second voltage lower than the first voltage is applied to a source of the first phase low-side FET,
the second phase half-bridge circuit includes:
a second phase high-side FET, configured to have a source to which the first voltage is applied;
and
a second phase low-side FET, configured to have a drain connected to a drain of the second phase high-side FET, and the second voltage is applied to a source of the second phase low-side FET,
the first phase low-side FET or the second phase high-side FET is disposed between the first phase high-side FET and the second phase low-side FET, and
the second phase low-side FET or the first phase high-side FET is disposed between the first phase low-side FET and the second phase high-side FET.

10 more elements

A motor drive circuit, comprising:

a first phase half-bridge circuit;
a second phase half-bridge circuit, wherein the first phase half-bridge circuit includes:
a first phase high-side FET, configured to have a first end to which a first voltage is applied;
and
a first phase low-side FET, configured to have a first end connected to a second end of the first phase high-side FET, and a second voltage lower than the first voltage is applied to the second end of the first phase low-side FET,
the second phase half-bridge circuit includes:
a second phase high-side FET, configured to have a first end to which the first voltage is applied;
and
a second phase low-side FET, configured to have a first end connected to a second end of the second phase high-side FET, and the second voltage is applied to the second end of the second phase low-side FET, and
the first phase low-side FET or the second phase high-side FET is disposed between the first phase high-side FET and the second phase low-side FET, and the second phase low-side FET or the first phase high-side FET is disposed between the first phase low-side FET and the second phase high-side FET;
a first conductive portion, configured to be connected to the first end of the first phase high-side FET and the first end of the second phase high-side FET;
a second conductive portion, configured to be connected to the second end of the first phase high-side FET and the first end of the first phase low-side FET;
a third conductive portion, configured to be connected to the second end of the first phase low-side FET and the second end of the second phase low-side FET;
and
a fourth conductive portion, configured to be connected to the second end of the second phase high-side FET and the first end of the second phase low-side FET, wherein
when viewed from a direction perpendicular to a direction in which the first phase high-side FET, the first phase low-side FET, the second phase low-side FET and the second phase high-side FET are arranged and a thickness direction of a substrate on which the first phase high-side FET, the first phase low-side FET, the second phase low-side FET and the second phase high-side FET are formed,
the second conductive portion overlaps the first conductive portion and the third conductive portion,
the fourth conductive portion overlaps the first conductive portion and the third conductive portion, and
the second conductive portion and the fourth conductive portion do not overlap each other.

16 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/947,958Filed 19 Sep 2022
Priority: JP 202115563024 Sep 2021
Published: US 2023/0114334 A113 Apr 2023
Granted: 5 Aug 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H02H 7/0838
For electric motors with control arrangements: with H-bridge circuit
H02M 7/003
Conversion of AC power input into DC power output; Conversion of DC power input into AC power output: constructional details, e.g. physical…
H02M 1/32
Details of apparatus for conversion: means for protecting converters other than automatic disconnection
H02M 7/5387
Using semiconductor devices only, e.g. single switched pulse inverters: in a bridge configuration