Semiconductor device including a plurality of dielectric materials between semiconductor dies and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJen-Yuan Chang, Tzu-Chung Tsai
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Abstract
A semiconductor device includes a first semiconductor die mounted on a substrate, a second semiconductor die mounted on the substrate and separated from the first semiconductor die, a first dielectric material between the first semiconductor die and the second semiconductor die and having a first density, and a column of second dielectric material in the first dielectric material, the second dielectric material having a second density different than the first density, and the second dielectric material including a void region.
Claims20
A method of forming a semiconductor device, the method comprising:
- mounting a first semiconductor die on a support substrate, the first semiconductor die comprising a first semiconductor substrate, a first intermetal dielectric over the first semiconductor substrate, and first metal lines and first metal vias within the first intermetal dielectric;
- mounting a second semiconductor die on the support substrate, such that the first semiconductor die and the second semiconductor die are separated, the second semiconductor die comprising a second semiconductor substrate, a second intermetal dielectric over the second semiconductor substrate, and second metal lines and second metal vias within the second intermetal dielectric;
- forming a first dielectric material layer between the first semiconductor die and the second semiconductor die, the first dielectric material layer having a first density;
- and
- forming a second dielectric material layer on the first dielectric material layer, the second dielectric material layer having a second density different than the first density, and the second dielectric material layer including a void region.
A method of forming a semiconductor device, the method comprising:
- forming a first dielectric material within a gap between a first semiconductor die and a second semiconductor die, the first semiconductor die comprising a first semiconductor substrate, a first intermetal dielectric over the first semiconductor substrate, and first metal lines and first metal vias within the first intermetal dielectric and the second semiconductor die comprising a second semiconductor substrate, a second intermetal dielectric over the second semiconductor substrate, and second metal lines and second metal vias within the second intermetal dielectric;
- and
- forming a second dielectric material over the first dielectric material layer within the gap between the first semiconductor die and the second semiconductor die, the second dielectric material having a physical property that is different from a physical property of the first dielectric material, and the second dielectric material including a void region located between the first semiconductor die and the second semiconductor die.
A method of forming a semiconductor device, the method comprising:
- depositing a first dielectric material within a gap between a first semiconductor die and a second semiconductor die, the first semiconductor die comprising a first semiconductor substrate, a first intermetal dielectric over the first semiconductor substrate, and first metal lines and first metal vias within the first intermetal dielectric and the second semiconductor die comprising a second semiconductor substrate, a second intermetal dielectric over the second semiconductor substrate, and second metal lines and second metal vias within the second intermetal dielectric;
- and
- depositing a second dielectric material over the first dielectric material layer within the gap between the first semiconductor die and the second semiconductor die, wherein depositing the second dielectric material comprises controlling a processing condition during the deposition such that a void region is formed within the second dielectric material.
Dependencies are inferred from the claim text.