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US 12,381,119 B2Granted
Seal for microelectronic assembly
AssigneeAdeia Semiconductor Bonding Technologies Inc.
InventorsRajesh Katkar, Liang Wang, Cyprian Emeka Uzoh, Shaowu Huang, Guilian Gao, Ilyas Mohammed
Life of this patent
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Abstract
Representative implementations of techniques and devices provide seals for sealing the joints of bonded microelectronic devices as well as bonded and sealed microelectronic assemblies. Seals are disposed at joined surfaces of stacked dies and wafers to seal the joined surfaces. The seals may be disposed at an exterior periphery of the bonded microelectronic devices or disposed within the periphery using the various techniques.
Claims24
A bonded structure, comprising:
- a first microelectronic component comprising a first surface and a second surface opposite the first surface, wherein the first surface comprises a first dielectric and a first conductive feature;
- a second microelectronic component comprising a third surface comprising a second dielectric and a second conductive feature, wherein the first surface is in contact with the third surface to form a bond joint, and wherein the bond joint comprises a dielectric-to-dielectric direct bond between the first dielectric and the second dielectric and a metal-to-metal direct bond between the first conductive feature and the second conductive feature;
- and
- a channel extending continuously around an interior region of the bonded structure, wherein a height of the channel extends at least across the bond joint, the channel having sidewalls at least partially covered with metal, the sidewalls extending from the second surface into the first microelectronic component.
1 more element
A bonded structure, comprising:
- a first microelectronic component having a first surface comprising a first dielectric and a first conductive feature and a second surface opposite the first surface;
- a second microelectronic component having a third surface comprising a second dielectric and a second conductive feature;
- a bond joint between the first surface and the third surface, wherein the first dielectric is directly bonded to the second dielectric, and wherein the first conductive feature is directly bonded to the second conductive feature;
- and
- a channel extending at least partially around an interior region of the bonded structure, the channel extending from the second surface through the first microelectronic component and across the bond joint into at least a portion of the second microelectronic component, a metallic material disposed in the channel.
2 more elements
A bonded structure, comprising:
- a first microelectronic component comprising a first surface, a second surface opposite the first surface, and a side edge extending from the first surface to the second surface;
- a second microelectronic component comprising a third surface directly bonded to the first surface without an intervening adhesive to form a bond joint;
- and
- a channel extending continuously around an interior region of the bonded structure, the channel having sidewalls extending from the second surface into the first microelectronic component,
- wherein, the bond joint comprises directly bonded insulating materials and directly bonded metal interconnects, and
- wherein, between the side edge and the interior region as viewed in a side cross-section of the bonded structure, metal is present at every elevation between the bond joint and the second surface.
3 more elements
A microelectronic assembly, comprising:
- a first microelectronic component having a first surface comprising a first dielectric and a first conductive feature;
- a second microelectronic component having a second surface comprising a second dielectric and a second conductive feature;
- a bond joint between the first surface and the second surface, wherein the first dielectric is directly bonded to the second dielectric, and wherein the first conductive feature is directly bonded to the second conductive feature;
- and
- a channel comprising an annular shape, wherein the channel extends around a periphery of the first microelectronic component, and wherein the channel extends at least to the bond joint.
2 more elements
Dependencies are inferred from the claim text.