Methods and apparatus for controlling plasma in a plasma processing system

A system comprising:

• a base radio frequency (RF) generator including a pulse master configured to generate a control signal, wherein the RF generator is configured to generate a base RF signal, wherein the base RF signal pulses between a first base power level and a second base power level;
• and
• a non-base RF generator coupled to the base RF generator, wherein the non-base RF generator is configured to receive the control signal from the pulse master of the base RF generator, wherein the non-base RF generator is configured to generate a non-base RF signal that pulses between a first non-base power level and a second non-base power level in synchronization with the control signal received from the pulse master of the base RF generator,
• wherein the base RF generator is configured to supply the base RF signal to an impedance matching circuit coupled to an electrode of a plasma chamber and the non-base RF generator is configured to supply the non-base RF signal to the impedance matching circuit.