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US 12,378,120 B2Granted
Wiring including graphene layer and method of manufacturing the same
AssigneesSamsung Electronics Co., Ltd., Seoul National University R&Db Foundation
InventorsKeunwook Shin, Kibum Kim, Kyung-Eun Byun, Hyeonjin Shin, Minhyun Lee, Changseok Lee
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Abstract
Provided are a wiring including a graphene layer and a method of manufacturing the wiring. The method may include growing a graphene layer on a substrate and doping the graphene layer with a metal. The graphene layer may be grown using a plasma of a hydrocarbon at a temperature of about 200° C. to about 600° C. by plasma enhanced chemical vapor deposition (PECVD).
Claims20
A method of manufacturing a wiring, the method comprising:
- growing a graphene layer on a substrate using a plasma of a hydrocarbon at a temperature of about 200° C. to about 600° C. by plasma enhanced chemical vapor deposition (PECVD);
- and
- doping the graphene layer with a metal.
A wiring comprising:
- a substrate;
- and
- a graphene layer doped with a metal on the substrate,
- wherein a metal content of the graphene layer doped with the metal is about 1 at % to about 50 at %, and
- a ratio of carbon having an sp2 bond structure to total carbon in the graphene layer doped with the metal is about 50% to about 99%.
2 more elements
Dependencies are inferred from the claim text.