Manufacturing method for a substrate wafer
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsRyo Taga, Yuki Tanaka
Life of this patent
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AssigneeShin-Etsu Handotai Co., Ltd.
InventorsRyo Taga, Yuki Tanaka
Estimating the term…
A manufacturing method for a substrate wafer, including: a wafer having a first and second main surface; forming a flattening resin layer on second main surface; with the flattening resin layer adsorbed and held as a reference surface, grinding or polishing first main surface as a first processing; removing flattening resin layer from the wafer; with the wafer's first main surface subjected to the first processing adsorbed and held, grinding or polishing second main surface as a second processing; with the second main surface subjected to second processing adsorbed and held, further grinding or polishing first main surface as a third processing; with first main surface subjected to third processing adsorbed and held, further grinding or polishing second main surface as a fourth processing to obtain a substrate wafer, wherein first processing and/or third processing is executed such that the wafer has a central concave or central convex thickness distribution.
A manufacturing method for a substrate wafer, comprising:
Dependencies are inferred from the claim text.