Detection device

A detection device comprising:

• a substrate;
• a plurality of photoelectric conversion elements arranged on the substrate;
• a plurality of transistors that each comprise a semiconductor layer and a gate electrode facing the semiconductor layer and are provided for each of the photoelectric conversion elements;
• and
• a first electrode and a second electrode that are provided between the substrate and the photoelectric conversion elements in a direction orthogonal to the substrate and face each other with an insulating film interposed between the first electrode and the second electrode, wherein
• the first electrode comprises a plurality of main parts that overlap the respective photoelectric conversion elements and a coupling part couples together adjacent main parts of the main parts,
• the second electrode is formed to have an island pattern for each of the photoelectric conversion elements,
• the first electrode is located in the same layer as that of the gate electrode, and
• the second electrode is located in the same layer as that of the semiconductor layer.