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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Masahiko Hayakawa, Tatsuya Honda
Estimating the term…
When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a source and drain electrode layers are provided in contact with the oxide semiconductor film is manufactured, after the formation of the gate electrode layer or the source and drain electrode layers by an etching step, a step of removing a residue remaining by the etching step and existing on a surface of the gate electrode layer or a surface of the oxide semiconductor film and in the vicinity of the surface is performed. The surface density of the residue on the surface of the oxide semiconductor film or the gate electrode layer can be 1×1013 atoms/cm2 or lower.
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.