# US 12,376,317 B2 · Semiconductor device structure with magnetic element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,376,317 B2 - Document ID: US12376317B2 - Status: Granted - Kind: B2 - Application number: 18/353,307 - Filed: 2023-07-17 - Published: 2023-11-09 - Granted: 2025-07-29 - Earliest claimed: 2018-08-31 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company, Ltd. - Inventors: Chi-Cheng Chen; Wei-Li Huang; Chien-Chih Kuo; Hon-Lin Huang; Chin-Yu Ku; Chen-Shien Chen - Web page: https://patentgrep.com/patent/US12376317B2 ## CPC - H10D 1/20: Inductors - H01F 41/046: {structurally combined with ferromagnetic material} - H10W 20/094: {by transforming insulators into conductors} - H10W 20/44: Conductive materials thereof - H10W 20/47: comprising two or more dielectric layers having different properties, e.g. different dielectric constants - H10W 20/497: {Inductive arrangements or effects of, or between, wiring layers} - H10W 72/30: Die-attach connectors - H10W 72/50: Bond wires - H10W 74/129: {forming a chip-scale package [CSP]} - H10W 74/137: {the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence)} - H10W 72/59: Bond pads specially adapted therefor - H10W 72/90: Bond pads, in general - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation element partially covering the magnetic element. The semiconductor device structure further includes a conductive feature over the isolation element. ## Claims ### Claim 1 A semiconductor device structure, comprising: a substrate; a magnetic element over the substrate; an isolation element partially covering the magnetic element, wherein the isolation element and the magnetic element have different widths; and a conductive feature over the isolation element. ### Claim 2 (depends on 1) The semiconductor device structure as claimed in claim 1, further comprising: an adhesive element between the magnetic element and the substrate. ### Claim 3 (depends on 2) The semiconductor device structure as claimed in claim 2, wherein the isolation element extends exceeding opposite edges of the adhesive element. ### Claim 4 (depends on 2) The semiconductor device structure as claimed in claim 2, wherein the adhesive element extends exceeding an edge of the magnetic element. ### Claim 5 (depends on 2) The semiconductor device structure as claimed in claim 2, wherein the adhesive element comprises titanium, aluminum, copper, or a combination thereof. ### Claim 6 (depends on 1) The semiconductor device structure as claimed in claim 1, wherein the isolation element is wider than the magnetic element along a first direction, and the magnetic element is wider than the isolation element along a second direction. ### Claim 7 (depends on 1) The semiconductor device structure as claimed in claim 1, wherein the magnetic element comprises a plurality of sub-layers, and each sub-layers is wider than another sub-layer above it. ### Claim 8 (depends on 7) The semiconductor device structure as claimed in claim 7, wherein a topmost sub-layer of the sub-layers has a first portion and a second portion, the second portion laterally surrounds the first portion, and the first portion is thicker than the second portion. ### Claim 9 (depends on 1) The semiconductor device structure as claimed in claim 1, wherein opposite edges of the isolation element are laterally between opposite edges of the magnetic element. ### Claim 10 (depends on 1) The semiconductor device structure as claimed in claim 1, wherein the isolation element extends across opposite edges of the magnetic element. ### Claim 11 A semiconductor device structure, comprising: a substrate; a magnetic element over the substrate; an isolation element extending across an edge of the magnetic element, wherein the magnetic element extends across opposite edges of the isolation element; and a conductive feature over the isolation element. ### Claim 12 (depends on 11) The semiconductor device structure as claimed in claim 11, further comprising an adhesive element between the magnetic element and the substrate. ### Claim 13 (depends on 12) The semiconductor device structure as claimed in claim 12, wherein the adhesive element is separated from the conductive feature by a hole. ### Claim 14 (depends on 12) The semiconductor device structure as claimed in claim 12, wherein an edge of the adhesive element is closer to an edge of the isolation element than the edge of the magnetic element. ### Claim 15 (depends on 11) The semiconductor device structure as claimed in claim 11, wherein opposite edges of the conductive feature are laterally between opposite edges of the isolation element. ### Claim 16 A semiconductor device structure, comprising: a substrate; a magnetic element over the substrate; a first isolation element covering a first portion of the magnetic element; a second isolation element covering a second portion of the magnetic element, wherein the first isolation element is spaced apart from the second isolation element; a first conductive feature over the first isolation element; and a second conductive feature over the second isolation element. ### Claim 17 (depends on 16) The semiconductor device structure as claimed in claim 16, wherein opposite edges of first isolation element are laterally between opposite edges of the magnetic element, and opposite edges of the second isolation element are laterally between the opposite edges of the magnetic element. ### Claim 18 (depends on 17) The semiconductor device structure as claimed in claim 17, wherein each of the first isolation element and the second isolation element extends across the magnetic element. ### Claim 19 (depends on 16) The semiconductor device structure as claimed in claim 16, further comprising: a metal-containing element between the magnetic element and the substrate, wherein the first isolation element is closer to the first conductive feature than the metal-containing element. ### Claim 20 (depends on 19) The semiconductor device structure as claimed in claim 19, further comprising: a dielectric element between the magnetic element and the metal-containing element.