Semiconductor laser and LIDAR system and also laser system with the semiconductor laser

A semiconductor laser, comprising

• a semiconductor layer stack, comprising an active zone for generating radiation,
• a first resonator mirror, a second resonator mirror, and an optical resonator arranged between the first and second resonator mirrors which extends in a direction parallel to a main surface of the semiconductor layer stack, wherein a reflectance R1 of the first resonator mirror is wavelength-dependent, so that R1 or a combined reflectance corresponding to a product R of R1 and the reflectance R2 of the second resonator mirror decreases in a wavelength range from a target wavelength λ0 of the laser to λ0+Δλ from a reflectance value R0, wherein Δλ is selected as a function of a temperature-dependent shift in an emission wavelength and is less than 100 nm, and
• wherein at least one of the following relationships applies to R:
• (i) R(λ)<0.3*R0 for at least one wavelength λ with λ0<λ<λ0+Δλ;
• (ii) dR/dλ<k/nm for λ=λ0 with a factor k≤−0.1% or
• at least one of the following relationships applies to R1:
• (iii) R1(λ)<0.3*R0 for at least one wavelength λ with λ0<λ<λ0+Δλ;
• (iv) dR1/dλ<k/nm for λ=λ0 with k≤−0.1%, and
• wherein R or R1 increases with increasing wavelength to R0 at a wavelength less than λ0.