Photonic device with improved heat dissipation for III-V/Si heterogeneous laser and associated manufacturing method
AssigneeScintil Photonics
InventorSylvie Menezo
Life of this patent
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Abstract
A photonic device comprises: —a support layer, —an optical layer extending in a main plane (x, y), subdivided into at least a first region and a second region adjacent in the main plane (x, y), and comprising a first optical waveguide in the first region and a second optical waveguide in the second region, —a stack of III-V semiconductor compounds, arranged on a dielectric layer, in the first region, —an intermediate layer, between the optical layer and the support layer, comprising a thermally conductive material forming a single-piece block, arranged in line with the first region and an optical and/or electrical cladding material arranged in line with the second region. A method is employed for manufacturing such a device.
Claims20
A photonic device comprising:
- a support layer;
- an optical layer extending in a main plane (x, y), subdivided at least into a first region and a second region adjacent in the main plane (x, y), the optical layer comprising a first optical waveguide in the first region and a second optical waveguide in the second region;
- a stack of III-V semiconductor compounds, arranged on a dielectric layer, itself arranged on the first waveguide, in the first region, the stack forming with the first optical waveguide a laser source;
- an intermediate layer, between the optical layer and the support layer, comprising a thermally conductive material forming a single-piece block, arranged in line with the first region and an optical and/or electrical cladding material arranged in line with the second region;
- and
- wherein the optical layer and/or the intermediate layer comprises at least one metal interconnection level to form electrical contacts of an active optical component, and/or to form at least one heat dissipation via between the first waveguide and the thermally conductive material.
A method for manufacturing a photonic device, comprising:
- a) providing a silicon-on-insulator substrate comprising a mono-crystalline silicon surface layer having a front face and a rear face, a buried dielectric layer disposed adjacent the rear face of the surface layer, and a base substrate;
- b) providing a support layer;
- c) providing an optical layer comprising:
- a first optical waveguide in a first region, the waveguide being formed in the surface layer, and
- a second optical waveguide, in a second region;
- d) forming an intermediate layer disposed on the optical layer or on the support layer or partially on the optical layer and partially on the support layer, the intermediate layer comprising a thermally conductive material forming a single-piece block, and an optical and/or electrical cladding material;
- e) assembling the silicon-on-insulator substrate and the support layer along a bonding interface, the intermediate layer being disposed between the support layer and the optical layer, the thermally conductive material being arranged in line with the first region and the optical and/or electrical cladding material being arranged in line with the second region;
- f) removing the base substrate;
- and
- g) forming a stack of III-V semiconductor compounds on the dielectric layer, in the first region.
Dependencies are inferred from the claim text.